Spin-valve effects in a semiconductor field-effect transistor: A spintronic device

Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor.

A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (CoyCu) 4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor str...

Nonballistic spin-field-effect transistor.

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba couplin...

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Reexamination of some spintronic field-effect device concepts

Modeling of spin metal-oxide-semiconductor field-effect transistor: A nonequilibrium Green’s function approach with spin relaxation

A spin metal-oxide-semiconductor field-effect transistor spin MOSFET , which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict that this device should display a very high magnetoresistance MR ratio between the cases of parallel and antiparallel magnetizations for the case of half-metal...